?guangdong hottech industrial co.,ltd e-mail:hkt@h eketai.com 1 / 4 he xt 2222a (npn) general purpose transistor replacement type :pxt2222a features ? epitaxial p lanar d ie c onstruction ? complementary pnp type available(hext2907a) maximumratings (t a = 25c unless otherwise noted) electrical characteristics (t a =25c unless otherwise noted ) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =10a , i e =0 75 v collector-emitter breakdown voltage v ceo i c =10ma , i b =0 40 v emitter-base breakdown voltage v ebo i e =10a , i c =0 6 v collector cut-off current i cbo v cb =60v,i e =0 0.01 ua emitter cut-off current i ebo v eb =5v,i c =0 0.01 ua dc current gain h fe(1) v ce =10v , i c =0.1ma 35 h fe(2) v ce =10v , i c =1ma 50 h fe(3) v ce =10v , i c =10ma 75 h fe(4) v ce =10v , i c =150ma 100 300 h fe(5) v ce =1v , i c =150ma 50 h fe(6) v ce =10v , i c =500ma 40 collector-emitter saturation voltage v ce (sat) i c =500ma , i b =50ma 1 v v ce (sat) i c =150ma , i b =15ma 0.3 v base-emitter saturation voltage v be (sat) i c =500ma , i b =50ma 2.0 v v be (sat) i c =150ma , i b =15ma 0.6 1.2 v transition frequency f t v ce =10v,i c =20ma,f=100mhz 300 mhz output capacitance c ob v cb =10v, i e = 0,f=1mhz 8 pf delay time t d v cc =30v, i c =150ma v be (off)=0.5v,i b1 =15ma 10 ns rise time t r 25 ns storage time t s v cc =30v,i c =150ma i b1 =-i b2 =15ma 225 ns fall time t f 60 ns parameter symbol value unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6 v collector current-continuous i c 600 ma collector power dissipation p c 0.5 w junction temperature t j 150 c storage temperature t stg -55 ~150 c sot-89 marking: 1p 1:base 2:collector 3:emitter
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 2 / 4 hext 2222a (npn) general purpose transistor typical characteristics 0 300 600 900 1200 0.1 1 10 100 11 0 1 0 0 300 600 900 1200 0 25 50 75 100 125 150 0 100 200 300 400 500 600 1 10 100 10 100 1000 11 01 0 0 10 100 1000 0.1 1 10 1 10 100 024681 01 21 41 6 0.00 0.05 0.10 0.15 0.20 0.25 1 10 100 10 100 com m on emitter v ce = 10v v be i c bese- em miter voltage v be (m v) collector current i c (ma) t a = 2 5 t a =1 0 0 600 =10 i c v besat base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 600 p c t a ambient temperature t a ( ) collect or power dissipation p c (mw) t a =100 t a =25 =10 i c v cesat collector-emitter saturation volt age v ces at (mv) collector curremt i c (ma) 600 i c h fe t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 10v 600 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib c ob c ib reverse volt age v (v) capacitance c ( pf) 20 common emitter t a =25 1ma 900ua 800ua 700ua 600ua 500ua 400ua 300ua 200ua i b = 100ua collector current i c (a) collector-emitter voltage v ce (v) st atic characteristic comm on emitter v ce =10v t a =25 collector current i c (ma) trans ition frequency f t (mhz) 500 i c f t
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 3 / 4 he xt 2222a (npn) general purpose transistor sot-89 package outline dimensions symbol d i m e n s i on s i n m i l l i m e t e r s d i m e n s i o n s i n i n c h e s min. max. min. max. a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 1.550ref. 0.061ref. e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e 1.500typ. 0.060typ. e1 3.000typ. 0.118typ. l 0.900 1.200 0.035 0.047
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 4 / 4 he xt 2222a (npn) general purpose transistor sot-89 tape and reel dimensionsareinmillimeter type a b c d e f p0 p p1 w sot-89 4.85 4.45 1.85 ? 1.50 1.75 5.50 4.00 8.00 2.00 12.00 tolerance 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 sot-89 tape leader and trailer sot-89 reel dimnsionsareinmillimetere reeloption d d1 d2 g h i w1 w2 7 dia ? 180 60.00 r32.00 r86.50 r30.00 ? 13.00 13.20 16.50 tolerance 2 1 1 1 1 1 1 1 empty pockets empty pockets leader tape components
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